Radiation Hardness of a Silicon MESFET 4K x 1 sRAM
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1483-1486
- https://doi.org/10.1109/TNS.1984.4333534
Abstract
A comprehensive study of the radiation hardness of the silicon MESFET technology using LOCOS isolation is reported. A MESFET 4K × 1 sRAM fabricated on bulk silicon using LOCOS isolation has essentially no change in performance through 28.5 Mrad(Si) total gamma dose, the maximum dose tested. Transient gamma upset of the memory occurs at 1 × 107 Rad(Si)/s. Discrete MESFET and LOCOS device characteristics are also reported as a function of total gamma dose.Keywords
This publication has 1 reference indexed in Scilit:
- Total Dose Radiation Effects on Silicon MESFET CircuitsIEEE Transactions on Nuclear Science, 1983