Conduction band effective mass in N-type silicon

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Abstract
Measurements of the infrared free carrier dispersion and Faraday rotation in N-type silicon are reported. The free carrier dispersion is determined directly by minimum deviation through prisms. Combination of the dispersion and Faraday rotation results gives an entirely optically determined room-temperature transverse effective mass of (0.225+or-0.01)m. The combination of results also yields the carrier concentrations in the specimens and simultaneous Hall coefficient measurements show that the Hall scattering constant is 1.7 at a donor concentration of about 3*1018 cm-3. This means that some previous effective mass determinations involving Hall effect experiments must be suspect.