Electron beam lithography with monolayers of alkylthiols and alkylsiloxanes

Abstract
Self-assembled monolayers have been modified with focused electron beams of energy 1–50 keV and scanning tunneling microscopy (STM) based lithography with energies of ∼10 eV. Modifications ∼15 nm in size have been formed by STM and ∼25 nm in size by 50 keV beams. The fact that these materials work as self-developing electron beam resists is demonstrated by both atomic force microscopy imaging and pattern transfer using conventional wet etchants. Patterns have been transferred to silicon substrates to a depth of ≳120 nm with a multistep wet etching process. The mechanism of electron beam modification has also been explored to better design future monolayer processes.

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