Abstract
18O+ ions with energies ranging from 10 to 45 keV have been implanted along the < 110 > or < 100 > directions of A1, Ni and Cu single crystals. The experimental techniques used to prepare the samples and to perform the implantations are described. The implantation profiles are determined with an ion probe microanalyser. They are characteristic of channelling implantation and vary with the energy of the 18O+ ions, the direction of implantation and the nature of the target