Thermal activation energy of manganese acceptors in gallium arsenide as a function of impurity spacing
- 1 July 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (7) , 3352-3354
- https://doi.org/10.1063/1.1662760
Abstract
The thermal ionization energy for Mn acceptors in GaAs decreases with increasing density of either Mn atoms or compensators. Measurements of the correlation of Ea with Na or Nd are complicated by impurity inhomogeneity. Envelope functions fitted to the data show the same energy (0.11 eV) for the infinite dilution asymptotic value as is found for the optical activation threshold.This publication has 9 references indexed in Scilit:
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