Solid-phase epitaxy of NiSi2 layer on Si(111) substrate from Si/Ni multi-layer structure prepared by molecular beam deposition
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 671-677
- https://doi.org/10.1016/0039-6028(86)90490-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Formation of Embedded Monocrystalline NiSi2 Grid Layers in Silicon by MBEJapanese Journal of Applied Physics, 1984
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980