Molecular beam epitaxy of (211)-InAs quantum sheets in GaAs

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Abstract
We study the synthesis of piezoelectrically active (211)-InAs quantum sheets in GaAs by molecular beam epitaxy. The important feature of our growth technique is the modulation of the substrate temperature during the interface formation. The final structures are investigated by high-resolution x-ray diffraction and photoluminescence spectroscopy. These experiments demonstrate the necessity to consider In segregation for the optimization of the optical response of these structures, and then reveal in addition that [211]-oriented samples exhibit structural and optical properties strikingly different from those of [100]-oriented samples.