Power dependence of the frequency bias caused by spurious components in the microwave spectrum in atomic fountains
- 28 August 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
- Vol. 53 (9) , 1584-1589
- https://doi.org/10.1109/TUFFC.2006.1678186
Abstract
The presence of spurious spectral components in the microwave excitation may induce frequency shifts in an atomic fountain frequency standard. We discuss how such shifts behave as a function of power variations of the excitation carrier and in the spur-to-carrier ratio. The discussion here is limited to the case of single-sideband spurs, which are generally much more troublesome due to their ability to cause frequency shifts. We find an extremely rich and unintuitive behavior of these frequency shifts. We also discuss how pulsed operation, typical of today's fountain frequency standards, relates to frequency shifts caused by spurs in the microwave spectrum. The conclusion of these investigations is that it is, at best, difficult to use elevated power microwaves in fountain frequency standards to test for the presence of spurs in the microwave spectrumKeywords
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