Silicon Layers Grown by Differential Molecular Beam Epitaxy

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Abstract
We report on molecular beam epitaxy (MBE) of Si layers at 750° and 550°C onto (100) Si substrates covered with a patterned oxide mask. Within the exposed substrate windows epitaxial growth and on the oxide‐covered areas polycrystalline growth take place at both temperatures. Different ratios of MBE film thickness to oxide thickness have been realized. The lattice perfection of the epitaxial layers, the grain size of the poly‐Si, and the boundary between the single‐crystalline and the polycrystalline Si at the oxide edges were investigated by scanning and transmission electron microscopy complemented by Nomarski microscopy and Secco etching. These differential MBE layers reproduce the oxide pattern and, with MBE films thinner than the oxide, the layer on top of the oxide can be removed by a lift‐off step. The electrical conductivity of Sb‐doped differential MBE layers is measured by means of spreading resistance. As an example of device application, a molybdenum Schottky diode is prepared and electrically characterized.

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