Interface electronic structure of organic semiconductors with controlled doping levels
- 24 August 2001
- journal article
- Published by Elsevier in Organic Electronics
- Vol. 2 (2) , 97-104
- https://doi.org/10.1016/s1566-1199(01)00016-7
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Energy Level Alignment and Interfacial Electronic Structures at Organic/Metal and Organic/Organic InterfacesAdvanced Materials, 1999
- HOMO/LUMO Alignment at PTCDA/ZnPc and PTCDA/ClInPc Heterointerfaces Determined by Combined UPS and XPS MeasurementsThe Journal of Physical Chemistry B, 1999
- Electroluminescence in conjugated polymersNature, 1999
- Electronic structure of 8-hydroxyquinoline aluminum/LiF/Al interface for organic electroluminescent device studied by ultraviolet photoelectron spectroscopyApplied Physics Letters, 1998
- Energy-level alignment at interfaces between metals and the organic semiconductor 4,4′-N,N′-dicarbazolyl-biphenylJournal of Applied Physics, 1998
- Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined x-ray and ultraviolet photoemission measurementsApplied Physics Letters, 1998
- Energy level alignment at Alq/metal interfacesApplied Physics Letters, 1998
- Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related TechniquesChemical Reviews, 1997
- Energy level bending and alignment at the interface between Ca and a phenylene vinylene oligomerApplied Physics Letters, 1996
- Organic electroluminescent diodesApplied Physics Letters, 1987