Intersubband Relaxation Rates of a Two-Dimensional Electron Gas under High Magnetic Fields

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Abstract
The electron-bound hole luminescence of a GaAs-based heterojunction has been investigated as a function of magnetic fields at low temperatures. The study of the intensities originating from different Landau levels allows one to obtain precious information about the relaxation rates within these levels and provides values far above those predicted by standard theories. A new mechanism involving impurity-assisted phonon emission is proposed which gives good agreement with the experimental results.