Near-Carrier Noise in FET Oscillators
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 83 (0149645X) , 282-284
- https://doi.org/10.1109/mwsym.1983.1130885
Abstract
An exhaustive study is presented of the relation of near-carrier FM noise of FET oscillators to baseband noise, gate technology, surface passivation, channel formation, and traps. FM noise performance of an FET oscillator will be presented which is over 20 dB better than heretofore reported.Keywords
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