A silicon NMOS monolithically integrated optical receiver
- 1 May 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (5) , 663-665
- https://doi.org/10.1109/68.588191
Abstract
We report a silicon p-i-n/NMOS monolithically integrated optical receiver. The p-i-n photodiode is a planar interdigitated structure that has exhibited a dark current of 1.3 pA at 5 V and quantum efficiencies of 84 and 74% at 800 and 870 nm, respectively. Both depletion- and enhancement-mode MOSFET's are used in the preamplifier; the effective channel length of the MOSFET's is 0.6 μm. A transimpedance of 6.5 k/spl Omega/ and a bandwidth of 130 MHz has been obtained from the preamplifier circuit. The sensitivities for a bit error rate of 10/sup -9/ were -33 and -25.5 dBm at bit rates of 155 and 300 Mb/s, respectively.Keywords
This publication has 8 references indexed in Scilit:
- A CMOS 240 Mb/s optical receiver with a transimpedance-bandwidth of 18 THzΩPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Resonant-cavity photodetectorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Si/SiO2 resonant cavity photodetectorApplied Physics Letters, 1996
- High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodetector with trench structureApplied Physics Letters, 1996
- A silicon-based integrated NMOS-p-i-n photoreceiverIEEE Transactions on Electron Devices, 1996
- Elimination or minimisation of optoelectroniccrosstalk between photodiodes and electronicdevices in OEIC on SiElectronics Letters, 1994
- A 3.3-V monolithic photodetector/CMOS-preamplifier for 531 Mb/s optical data link applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Gigahertz transresistance amplifiers in fine line NMOSIEEE Journal of Solid-State Circuits, 1984