Study of Si Etch Rate in Various Composition of SC1 Solution
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1A) , L45
- https://doi.org/10.1143/jjap.32.l45
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Crystal-Originated Singularities on Si Wafer Surface after SC1 CleaningJapanese Journal of Applied Physics, 1990
- A Mechanistic Study of Silicon Etching in NH 3 / H 2 O 2 Cleaning SolutionsJournal of the Electrochemical Society, 1990