Interrelationship between the saturated drift velocity and impact ionization of electrons in silicon
- 15 May 1973
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (10) , 522-524
- https://doi.org/10.1063/1.1654493
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Drift velocity of electrons and holes and associated anisotropic effects in siliconJournal of Physics and Chemistry of Solids, 1971
- TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORSApplied Physics Letters, 1966
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961