Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface

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Abstract
Initial stage of InAs pseudomorphic layer transformation (1–3 ML) on GaAs (100) singular surface may result for sequential submonolayer molecular beam epitaxy in formation of a pseudoperiodic array of InAs ‘‘wires’’ along the [001] direction. Complex parquet structures having similar anisotropy are formed on misoriented surface (3° towards [0–11] direction). Increase in growth interruption time after each growth cycle for 2 ML InAs deposited on singular surface results in decomposition of the wires into dots arranged in a 2D square lattice. Intentional substrate misorientation stabilizes the initial ordering effect along [001] and does not change the direction of anisotropy.

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