Model study of the local vibration center related to EL2 levels in GaAs
- 22 February 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (8) , 628-630
- https://doi.org/10.1063/1.99386
Abstract
A tentative explanation is given for a recently reported local vibrational mode induced infrared absorption which is related to EL2 centers in GaAs. Interstitial (or off-center substitutional) oxygen is suggested to be responsible for these vibration modes. Taking lattice relaxation into account, a simple model based on the two-center bond theory is proposed and evaluated. The adequacy of this model strongly implies a relationship of EL2 centers in the measured samples with oxygen.Keywords
This publication has 3 references indexed in Scilit:
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- Variation of the midgap electron traps (EL2) in liquid encapsulated Czochralski GaAsJournal of Applied Physics, 1983
- Theory of the two-center bondPhysical Review B, 1983