LASER-EXCITED PHOTOLUMINESCENCE OF OVERCOMPENSATED P+ GaAs AND THE BAND-FILLING MODEL
- 1 November 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 5 (9) , 188-190
- https://doi.org/10.1063/1.1754112
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- ABSORPTION EDGE MEASUREMENTS IN COMPENSATED GaAsApplied Physics Letters, 1964
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963
- Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent JunctionsPhysical Review Letters, 1963
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962
- Tunneling-Assisted Photon Emission in Gallium ArsenideJunctionsPhysical Review Letters, 1962