Surface activated bonding of silicon wafers at room temperature

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Abstract
A method to bond silicon wafers directly at room temperature was developed. In this method, surfaces of two silicon samples are activated by argon atom beam etching and brought into contact in a vacuum. By the infrared microscope and KOH etching method, no void at the bonded interface was detected in all the specimens tested. In the tensile test, fracture occurred not at the interface but mainly in the bulk of silicon. From these results, it is concluded that the method realizes strong and tight bonding at room temperature and is promising to assemble small parts made by the silicon wafer process.

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