Anisotropy of the Microwave Conductivity in Polar Semiconductors
- 1 June 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (7) , 3134-3139
- https://doi.org/10.1063/1.1659375
Abstract
The disturbance of the distribution function of hot electrons due to a microwave field directed parallel or perpendicular to a steady electric field is calculated considering the interaction of electrons with electrons, polar optical phonons, and impurities. The small‐signal microwave conductivity of n‐InSb is calculated and compared with experiments at 33 GHz as well as with results obtained by a previously published simpler approach.This publication has 7 references indexed in Scilit:
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- Microwave Conductivity of Semiconductors in the Presence of High Steady Electric FieldsPhysical Review B, 1963
- Hot Electrons in Indium AntimonidePhysical Review B, 1963
- Behavior of Hot Electrons in Microwave FieldsPhysical Review B, 1961
- A study of energy-loss processes in germanium at high electric fields using microwave techniquesJournal of Physics and Chemistry of Solids, 1961
- The influence of interelectronic collisions on conduction and breakdown in polar crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958