Light-Emitting Diodes Based on Silicon-Backbone Polymers
- 1 March 1997
- journal article
- Published by Taylor & Francis in Molecular Crystals and Liquid Crystals
- Vol. 294 (1) , 127-132
- https://doi.org/10.1080/10587259708032264
Abstract
Recently near-ultraviolet electroluminescence (EL) was observed from a typical Si-backbone polymer, poly(methylphenylsilane) (PMPS). This study investigates the dependence of the EL characteristics on temperature, the electron injecting electrodes and the “defect” concentration at the interface between PMPS and electron injecting electrodes, in order to clarify the EL process in PMPS-LEDs.Keywords
This publication has 14 references indexed in Scilit:
- Fabrication of electron injecting Mg:Ag alloy electrodes for organic light-emitting diodes with radio frequency magnetron sputter depositionApplied Physics Letters, 1996
- Electroluminescence from triplet excited states of benzophenoneApplied Physics Letters, 1996
- Behavior of charge carriers and excitons in multilayer organic light-emitting diodes made from a polysilane polymer as monitored with electroluminescenceJournal of Applied Physics, 1996
- Ultraviolet Electroluminescent Diode Utilizing Poly(methylphenylsilane)Japanese Journal of Applied Physics, 1995
- Electroluminescence from multilayer organic light-emitting diodes using poly(methylphenylsilane) as hole transporting materialJournal of Applied Physics, 1995
- Electroluminescent devices based on poly(methylphenylsilane)Advanced Materials, 1993
- Poly(methylphenylsilane) film as a hole transport layer in electroluminescent devicesApplied Physics Letters, 1991
- Electronic transport in silicon backbone polymersPhilosophical Magazine Part B, 1990
- Polysilane high polymersChemical Reviews, 1989
- The photoluminescence of poly(methylphenylsilylene): the origin of the long-wavelength broad bandMacromolecules, 1989