Synthesis of carbon nanotube bridges on patterned silicon wafers by selective lateral growth

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Abstract
Floated carbon nanotube bridges were synthesized on a patterned silicon wafer by thermal chemical vapor deposition of acetylene. A conventional photolithography was used to define the catalytic nickel line patterns. The carbon nanotubes grow laterally from the side face to side face of the nickel catalyst by a SiO2 vertical growth barrier deposited on the nickel layer. The typical diameter of carbon nanotube bridges is 10–30 nm and it depends on the thickness of the catalytic nickel layer. Our laterally grown carbon nanotubes have a bamboo structure in which the spacing of compartment layers increases with an increase in temperature. We can control the length, linearity, and density of the carbon nanotube bridges by adjusting various synthetic process parameters and find they may possibly be applied to nanoelectronic devices.