Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
- 1 January 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (1A) , L4
- https://doi.org/10.1143/jjap.30.l4
Abstract
Selective growth of InGaAs by Ar-ion-laser-assisted metalorganic molecular beam epitaxy is studied. Laser irradiation enhances the InGaAs growth rate at substrate temperatures below 500°C, but suppresses it above 530°C. It is found that the variation in the InGaAs growth rate due to laser irradiation is attributed to the variation in the GaAs growth rate in the InGaAs film. The cross-sectional profile of the area where the growth rate suppression occurs is concave with steep sidewalls and a flat bottom, while that of the area where the growth rate enhancement occurs is Gaussian-like.Keywords
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