Reduction of p -doped mirror electrical resistance of GaAs/AlGaAs vertical-cavity surface-emitting lasers by delta doping
- 30 September 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (20) , 1771-1772
- https://doi.org/10.1049/el:19931179
Abstract
Tho Letter reports the reduction of p-mirror electrical resistance using a very simple delta doping technique. The differentia] resistance was reduced almost by half, and the peak output power was increased by about 40% with delta doping. No significant difference was observed in threshold current and efficiency.Keywords
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