Crystal growth of CuInSe2 by the Bridgman method

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Abstract
Single crystals of CuInSe2 have been fabricated by the vertical Bridgman method. A conventional Czochralski crystal-pulling system was adapted for this purpose. An accelerated crucible-rotation technique was employed for a better mixing of the melt during the growth. Void- and crack-free crystal grains with an area as large as 50 mm2 and a thickness of more than 5 mm could be selectively cut from the ingots. From room-temperature Hall-effect measurements, mobility values as large as 73 cm2 ∙ V−1 ∙ s−1 were obtained for the present samples. X-ray diffraction studies suggested that abrasive polishing might create an amorphous layer on the surface of the CuInSe2 crystals.

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