Residual Stress, Chemical Etch Rate, Refractive Index, and Density Measurements on SiO2 Films Prepared Using High Pressure Oxygen
- 1 February 1980
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 127 (2) , 396-399
- https://doi.org/10.1149/1.2129677
Abstract
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