Microwave performance of pseudomorphic resonant-tunnelling hot electron transistors at 77 K
- 5 January 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (1) , 34-35
- https://doi.org/10.1049/el:19890025
Abstract
The letter describes the first 77 K microwave measurements for resonant-tunnelling hot electron transistors (RHETs) fabricated using GaInAs/AlInAs pseudomorphic heterostructures. A collector current peak-to-valley ratio of 10 is obtained with a peak collector current density of 2×105A/cm2. A current gain cut-off frequency fT of 63 GHz and a maximum oscillation frequency fmax of 44 GHz are measured at 77 K with an emitter current density of 1.1×105A/cm2Keywords
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