Microscopic Calculation of Localized Electron States in an Intrinsic Glass

2 March 1981

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 46 (9) , 607-610
https://doi.org/10.1103/physrevlett.46.607

Abstract

A microscopic calculation of localized electron states of an intrinsic, real, threedimensional disordered solid has been attempted by applying a first-principles method to a structurally relaxed large network of amorphous silicon dioxide. A valence-band mobility edge of 0.15-0.30 eV is estimated. No localized states are found near the conduction-band edge. The nature and the microscopic origin of these localized states are analyzed in terms of local structural disorder.

Keywords

This publication has 17 references indexed in Scilit:

Optical dielectric function of intrinsic amorphous silicon
Physical Review B, 1978
Orthogonalized linear combinations of atomic orbitals. II. Calculation of optical properties of polymorphs of silicon
Physical Review B, 1977
Electronic structure of Si $O_{2}$ , ${Si}_{x} {Ge}_{1 - x} O_{2}$ , and Ge $O_{2}$ from photoemission spectroscopy
Physical Review B, 1977
Orthogonalized linear combinations of atomic orbitals: Application to the calculation of energy bands of Si III
Physical Review B, 1975
Hole mobility and transport in thin SiO2 films
Applied Physics Letters, 1975
Electronic structure of Si $O_{2}$ . II. Calculations and results
Physical Review B, 1974
Chemical Bonding Effects in the Oxygen $K α$ X-Ray Emission Bands of Silica
Physical Review B, 1973
Charge-Carrier Transport Phenomena in Amorphous Si $O_{2}$ : Direct Measurement of the Drift Mobility and Lifetime
Physical Review Letters, 1973
The structure of vitreous silica: Validity of the random network theory
Philosophical Magazine, 1972
Absence of Diffusion in Certain Random Lattices
Physical Review B, 1958