Re-examination of high pressure electron transport properties of GaAs

1 November 1979

journal article
Published by Canadian Science Publishing in Canadian Journal of Physics

Vol. 57 (11) , 1929-1933
https://doi.org/10.1139/p79-264

Abstract

Previous data by Pitt and Lees on the pressure variation of the electrical conductivity σ and Hall coefficient R_H of n-type GaAs samples have been reanalyzed using a three band (Γ, L, X) model. Calculations of σ and R_H have been made using the method of Fletcher and Butcher and the resulting values fitted to the experimental data using the pressure coefficients of the band energy differences, the deformation potential E_DX of the X band, and the coupling coefficient D_LX between L and X bands as adjustable parameters and taking all other scattering parameters from a previous analysis of the temperature variation of σ and R_H. The results give values of E_DX and D_LX of 12.5 eV and 1.1 × 10¹¹ eV/m, respectively, and stress the importance of interband scattering in determining electron mobility values.

Keywords

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