Fabrication of 300 Å Thick BiSrCaCuO Thin Films with Tc of 108 K by use of Ion Implantation

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Abstract
BiSrCaCuO thin films of 300 Å thickness were deposited on MgO(100) substrates by magnetron sputtering and were subsequently annealed at 875°C for 0.5 h. The annealed films exhibited markedly high T c values in the range of 90 K. These films were irradiated with 100 keV Ar ions at 10 K and finally annealed at 730°C for 0.5 h. The T c of these films increased to 108 K which is equivalent to the maximum value so far reported for this system. The role of 100 keV Ar ions in the film fabrication is described in terms of elastic nuclear collision events in the low-energy cascade region.