Atomic step organization in homoepitaxial growth on GaAs(111)B substrates

• 1 July 1994
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 12  (4) , 2579-2583
• https://doi.org/10.1116/1.587805

Abstract

Keywords

• THERMODYNAMICS
• SURFACE ENERGY
• PHYSICAL PROPERTIES
• ARSENIC
• SURFACE RECONSTRUCTION
• MOLECULAR BEAM EPITAXY
• ELECTRON DIFFRACTION
• FREE ENERGY
• ATOMIC FORCE MICROSCOPY