Silicon Photodiodes With Stable, Near-Theoretical Quantum Efficiency In The Soft X-Ray Region
- 27 November 1989
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 126-132
- https://doi.org/10.1117/12.961812
Abstract
Silicon photodiodes having practically no carrier recombination at the Si-SiO2 interface or in the front diffused region have been developed by defect-free n-type impurity diffusion into p-type silicon. These photodiodes exhibit very high quantum efficiencies in the 10 eV to 150 eV photon energy region, typically 37 electrons per photon at 150 eV, which is about 300 times the quantum efficiency of the more commonly used photoemissive type soft X-ray detectors. The quantum efficiency of the developed diodes has been found to be stable to a few percent after exposure to photons in the region of 5eV to 200eV, with fluences in excess of 1014/cm2. No significant change in the quantum efficiency was observed after storage in air for several months.Keywords
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