Sputter deposited titanium disilicide at high substrate temperatures
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 444-446
- https://doi.org/10.1063/1.95252
Abstract
Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on 〈111〉 bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.Keywords
This publication has 3 references indexed in Scilit:
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