Calculation of drift velocity in silicon at high electric fields†
- 1 June 1968
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 24 (6) , 573-578
- https://doi.org/10.1080/00207216808938056
Abstract
Drift velocity in n and p-type silicon is calculated using the Monto Carlo method to determine the current carrier distribution. Agreement with recent measurements for high field drift velocity is good. Carrier-lattice scattering rates for p-type silicon were determined from low field mobility versus temperature. D. Long's model was used for n-type silicon.Keywords
This publication has 15 references indexed in Scilit:
- Monte Carlo calculation of the velocity-field relationship for gallium arsenideSolid State Communications, 1968
- Electron drift velocity in avalanching silicon diodesIEEE Transactions on Electron Devices, 1967
- Measurement of high-field carrier drift velocities in silicon by a time-of-flight techniqueIEEE Transactions on Electron Devices, 1967
- On the Deviation from the Einstein Relation Observed for Diffusion of Ag+Ions in α-Ag2S and OthersJournal of the Physics Society Japan, 1966
- Decrease of electron temperature by electric fieldsProceedings of the Physical Society, 1965
- Energy distribution of holes in electric fieldsPhysics Letters, 1964
- Analysis of Lattice and Ionized Impurity Scattering in-Type GermaniumPhysical Review B, 1962
- Non-ohmic behaviour in siliconJournal of Physics and Chemistry of Solids, 1962
- Lattice mobility of hot carriersJournal of Physics and Chemistry of Solids, 1959
- Drift and Conductivity Mobility in SiliconPhysical Review B, 1956