Effect of Growth Imperfections on the Strength of Aluminum Single Crystals
- 1 August 1956
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 27 (8) , 950-954
- https://doi.org/10.1063/1.1722520
Abstract
The effect of growth imperfections on the critical resolved shear stress is investigated for high-purity (99.99+%) aluminum single crystals as compared with strain-anneal crystals. An apparatus for measuring strains of the order of 0.2 μin. is described. Using etch pits as an index, the critical resolved shear stress is found to be inversely proportional to the growth imperfections for a range of etch pit density ρ of 5 to 25×104/cm2. An elastic range is demonstrated; and prior plastic deformation is found to lower Young's modulus. The results are interpreted in terms of dislocation theory.This publication has 6 references indexed in Scilit:
- Etch Pits and Dislocations in Germanium and SiliconJOM, 1954
- Self-Diffusivity Along Edge-Dislocation Singular Lines in SilverJOM, 1954
- XLVIII. The effect of small amounts of cold-work on Young's Modulus of copperJournal of Computers in Education, 1953
- Observations of Dislocations in Lineage Boundaries in GermaniumPhysical Review B, 1953
- Quantitative Predictions from Dislocation Models of Crystal Grain BoundariesPhysical Review B, 1949
- Micro-plasticity in crystals of tinProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1936