Measurement of electron attachment processes in a high-temperature plasma
- 1 April 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 59 (4) , 605-607
- https://doi.org/10.1109/proc.1971.8222
Abstract
An experimental technique has been developed for measuring rate constants of electron attaching reactions as well as ion-molecule reactions in plasma at 2000-3000°K. Reaction product ions are mass analyzed and rate constants are obtained from plots of the collected ion current. The rate constant for O-formation from N2O varies from about 3 to 9×10-9cm3/s over the temperature range of 2400-3000°K while the rate constant for F-formation from SF6varies from 2.8 to 4×10-10cm3/s for temperatures from 2775 to 3000°K. A brief survey of experimental techniques for measuring electron attachment rate constants at lower temperatures is also given, together with a comparison of these rate constants and present high-temperature values.Keywords
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