The sulfur-passivated InP surface
- 1 March 1991
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 69 (3-4) , 329-332
- https://doi.org/10.1139/p91-055
Abstract
The passivation of the InP surface by sulfur treatment is studied in the temperature range between 150–300 °C by angle resolved X-ray photoelectron spectroscopy and photoluminescence measurements. The thermal sulfurization results in a 30 Å (1 Å = 10−10 m) overlayer of In2S3 and P2O5. This cap layer lowers the phosphorus escape rate from the substrate thereby reducing the defects associated with phosphorus vacancies.Keywords
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