A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM's

1 May 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (5) , 243-245
https://doi.org/10.1109/EDL.1987.26617

Abstract

We report measurements of 200-s charge-recovery time constants at 300 K in the dark for an MBE-grown GaAs p- -n+ - p-buried well structure. Storage-time-versus-temperature measurements indicate that the charge recovery is due to generation through midgap levels. The results suggest the possibility of MODFET- or MESFET-compatible single-transistor buried-well dynamic RAM's capable of operating at or above room temperature.

Keywords

GALLIUM ARSENIDE
DRAM CHIPS
VOLTAGE
CAPACITANCE
CURRENT MEASUREMENT
MODFET CIRCUITS
FORWARD CONTRACTS
SUBSTRATES
ELECTRONS
TIME MEASUREMENT

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