Monolithically integrated Gunn oscillator at 35 GHz

5 July 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (14) , 603-604
https://doi.org/10.1049/el:19840416

Abstract

A fully planar monolithically integrated Gunn oscillator for 35 GHz has been constructed on a GaAs substrate. An output power of about 1.5 mW, corresponding to an efficiency of 0.5%, is obtained from the oscillator in its present unoptimised form. The device is intended for use as a local oscillator in integrated millimetre-wave receivers. Measurements are made by means of quasi-optical output coupling.

Keywords

LOCAL OSCILLATOR
GAAS SUBSTRATE
OUTPUT POWER
EHF
QUASIOPTICAL COUPLING
MM-WAVES
MMIC
EFFICIENCY
FREQUENCY 35 GHZ
KA-BAND
INTEGRATED MILLIMETRE-WAVE RECEIVERS
PLANAR MONOLITHICALLY INTEGRATED GUNN OSCILLATOR

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