Room temperature single electron effects in a Si nano-crystal memory
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (12) , 630-631
- https://doi.org/10.1109/55.806109
Abstract
An MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano-crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5/spl times/10/sup 11//cm/sup 2/ were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For the first time, room temperature single electron effects are observed. These prove the feasibility of practical Si nano-crystal memory.Keywords
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