Laser light scattering detection of InGaAs strained layer relaxation during molecular-beam epitaxial growth
- 1 May 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (3) , 1014-1017
- https://doi.org/10.1116/1.586859
Abstract
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