Copper electromigration in polycrystalline copper sulfide
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 327-335
- https://doi.org/10.1063/1.333967
Abstract
Measurements of the electrochemical potential distribution on polycrystalline Cu2-αS have been made. It was found that the basic transport mechanism for ionic conduction at temperatures between 25–70 °C for single phase chalcocite can be modeled as a vacancy mechanism. The chemical diffusion coefficient of copper in coper sulfide depends on the stoichiometry of the material and exhibit Arrhenius-type activated temperature dependence with the activation energy Ea=0.45 eV.This publication has 12 references indexed in Scilit:
- The effects of heat treatments on the transport properties of CuxS thin filmsJournal of Applied Physics, 1982
- Theory and practice of a powerful technique for electrochemical investigation of solid solution electrode materialsJournal of Solid State Chemistry, 1980
- The design and fabrication of CdS/Cu2S cells of 8.5-percent conversion efficiencyIEEE Transactions on Electron Devices, 1979
- Electrical Conduction and Phase Transition of Copper SulfidesJapanese Journal of Applied Physics, 1973
- Electrochemical Method to Measure the Copper Ionic Diffusivity in a Copper Sulfide ScaleJournal of the Electrochemical Society, 1970
- On the Theory of Mixed Conduction with Special Reference to Conduction in Silver Sulfide Group SemiconductorsJournal of the Physics Society Japan, 1961
- Point Contact of Pt and γ-Cu2SJournal of the Physics Society Japan, 1956
- On the Electrical Conductivity of Cuprous Sulfide: A Diffusion TheoryJournal of the Physics Society Japan, 1953
- Electrical Conductivity of Silver SulfideThe Journal of Chemical Physics, 1952
- The Physical Properties of Cuprous Sulfides-SemiconductorsJournal of the Physics Society Japan, 1951