1.55 µm Butt-Jointed Distributed Bragg Reflector Lasers Grown Entirely by Low-Pressure MOVPE
- 1 April 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (4A) , L693
- https://doi.org/10.1143/jjap.27.l693
Abstract
1.55 µm distributed Bragg reflector lasers were fabricated entirely by low-pressure MOVPE growth. An active waveguide was connected to a passive waveguide by a butt-joint technique. In the butt-jointed structure, the optical field axis in the active region was matched to that in the passive region. Devices fabricated were operated at currents as low as 13 mA. Spectrum linewidth as narrow as 3.4 MHz was obtained at four times the threshold current.Keywords
This publication has 5 references indexed in Scilit:
- MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substratesIEEE Journal of Quantum Electronics, 1987
- Low-threshold operation of 1.5μm buried-heterostructure DFB lasers grown entirely by low-pressure MOVPEElectronics Letters, 1987
- Investigation of linewidth and side-mode suppression for a DBR laser with integrated passive waveguideElectronics Letters, 1986
- Wavelength stabilisation of 1.5 μm GaInAsP/InP bundle-integrated-guide distributed-Bragg-reflector (BIG-DBR) lasers integrated with wavelength tuning regionElectronics Letters, 1986
- GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguideElectronics Letters, 1981