Growth of high quality Ge MBE film
- 1 April 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (3) , 431-438
- https://doi.org/10.1016/0022-0248(83)90171-9
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- High sensitivity Si:P and Ge:Li photoconductive i.r. detectors for low photon background applicationsInfrared Physics, 1981
- Improved germanium avalanche photodiodesIEEE Journal of Quantum Electronics, 1980
- Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µmIEEE Journal of Quantum Electronics, 1978
- Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping ControlJournal of the Electrochemical Society, 1977
- Modifications of epitaxy in evaporated films by electric charge effectsJournal of Crystal Growth, 1975
- Effect of Deposition Parameters on the Crystallinity of Evaporated Germanium FilmsJournal of Applied Physics, 1969
- Evaporation-condensation method for making germanium layers for transistor purposesSolid-State Electronics, 1963
- Epitaxy of Germanium Films on Germanium by Vacuum EvaporationJournal of Applied Physics, 1962
- Germanium Films on Germanium Obtained by Thermal Evaporation in VacuumJournal of Applied Physics, 1961
- Sur les propriétés électriques de couches minces de germaniumJournal de Physique et le Radium, 1951