4H-SiC (11-20) Epitaxial Growth

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 189-192
• https://doi.org/10.4028/www.scientific.net/msf.338-342.189

Abstract

Keywords

• (11-20)
• CHEMICAL VAPOR DEPOSITION (CVD)
• DEEP LEVEL
• HOMOEPITAXIAL GROWTH
• X-RAY DIFFRACTOMETRY