KINETICS OF FORMATION OF ANODIC OXIDE FILMS ON BISMUTH
- 1 May 1962
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Chemistry
- Vol. 40 (5) , 903-920
- https://doi.org/10.1139/v62-137
Abstract
The steady-state and transient kinetics of formation of thin insulating anodic oxide films on bismuth have been investigated. The thickness of the films was determined by the spectrophotometric method. No dependence on the crystal face of the substrate was detected (sensitivity better than 1% with thicker films). The transient behavior was found to be somewhat different from that of tantalum. The activation distances were found to be unusually large. The dielectric properties were also investigated.Keywords
This publication has 9 references indexed in Scilit:
- The Equivalent Series Resistance of Anodically Formed Oxide Films on AluminumJournal of the Electrochemical Society, 1961
- ANODIC OXIDE FILMS ON NIOBIUM: THICKNESS, DIELECTRIC CONSTANT, DISPERSION, REFLECTION MINIMA, FORMATION FIELD STRENGTH, AND SURFACE AREACanadian Journal of Chemistry, 1960
- The contribution of microfissures to the dielectric losses of anodic oxide films on tantalum and zirconium and their role in electrolytic rectificationTransactions of the Faraday Society, 1959
- Transient effects in the ionic conductance of anodic-oxide films at high fieldsJournal of Physics and Chemistry of Solids, 1957
- Farbige Schichten an WismutanodenCollection of Czechoslovak Chemical Communications, 1957
- The Kinetics and Mechanism of Formation of Anode Films on Single-Crystal InSbJournal of the Electrochemical Society, 1957
- Variation of anodic film growth with grain orientation in zirconiumActa Metallurgica, 1956
- Ionic Conductivity of Tantalum Oxide at Very High FieldsPhysical Review B, 1956
- The Anodizing of Zirconium and Other Transition Metals in Nitric AcidJournal of the Electrochemical Society, 1953