Electron states at steps in transition metal surfaces: A cluster-Bethe lattice approximation
- 1 May 1978
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 8 (5) , 873-881
- https://doi.org/10.1088/0305-4608/8/5/018
Abstract
The electronic density of states at a planar and at a stepped FCC transition metal surface is calculated within the cluster-Bethe lattice approximation. The authors use a Husumi cactus formed by tetrahedra as a boundary condition instead of the Bethe lattice in order to take into account the effects of the close packing of the FCC lattice. The calculation is performed for a simple s-d Hamiltonian. Effects of the different topologies on the density of states appear very clearly in the calculation.Keywords
This publication has 15 references indexed in Scilit:
- Electron states at steps in semiconductor surfacesSolid State Communications, 1977
- Spectral densities for electronic surface statesJournal of Physics C: Solid State Physics, 1977
- On the local densities of states on flat and stepped Pt surfacesSolid State Communications, 1976
- Electronic structure based on the local atomic environment for tight-binding bands. IIJournal of Physics C: Solid State Physics, 1975
- Model calculation of the electronic structure of a (111) surface in a diamond-structure solidJournal of Physics C: Solid State Physics, 1975
- "Cluster-Bethe-lattice" method: Electronic density of states of amorphous and crystalline homopolar solidsPhysical Review B, 1974
- Molecular-Beam Study of Hydrogen-Deuterium Exchange on Low-and High-Miller-Index Platinum Single-Crystal SurfacesPhysical Review Letters, 1973
- Approximate calculation of electronic band structures. IV. Density of states for transition metalsJournal of Physics C: Solid State Physics, 1970
- Self-Consistent Model of Hydrogen ChemisorptionPhysical Review B, 1969
- On the theory of cooperative phenomena in crystalsAdvances in Physics, 1960