Field and spatial geometry dependencies of the electron and hole ionization rates in GaAs/AlGaAs multiquantum well APD's
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (5) , 634-641
- https://doi.org/10.1109/16.2506
Abstract
No abstract availableKeywords
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