High-yield self-alignment method for submicrometre GaAs m.e.s.f.e.t.s
- 3 August 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (16) , 523-524
- https://doi.org/10.1049/el:19780351
Abstract
A high-yield self-alignment technique for submicrometer GaAs m.e.s.f.e.t.s is described. This method allows the production of submicrometre gate lengths and source-drain spacings by means of standard contact photolithography without requiring a particularly fine geometry on the masks. A 0.5 μm long gate and a source-drain spacing of 2 μm were obtained.Keywords
This publication has 0 references indexed in Scilit: