Diagnostics of dual source reactive magnetron sputter deposition of aluminum nitride and zirconium nitride thin films

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Abstract
The process of reactive sputtering of elemental Al and Zr in an Ar/N2 mixture has been examined by atomic absorption spectroscopy. Results have been presented further supporting the existence of a chemical competition effect during dual source reactive sputtering. The growth of epitaxial AlN film on Si(111) by laser beam interference is monitored in real time, which yielded a measurement of the true growth rate. By correlating the two measurements, a linear proportionality between the true growth rate of AlN and the gas phase Al density has been demonstrated.

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